KMB7D1DP30QA mosfet equivalent, trench mosfet.
VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V RDS(ON)=41m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design
1 4 8 5 B1 B2 A
DIM A B1 B2 D G .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
D P G
H T L
FEATURES
VDSS=-30V, ID=-7.1A .
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