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KEC

KRC234M Datasheet Preview

KRC234M Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER
CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1
B
C
E
KRC231M~KRC235M
EPITAXIAL PLANAR NPN TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
30
15
5
600
400
150
-55150
UNIT
V
V
V
mA
mW
2000. 8. 23
Revision No : 1
1/4




KEC

KRC234M Datasheet Preview

KRC234M Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

KRC231M~KRC235M
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
KRC231M
KRC232M
Input Resistor
KRC233M
KRC234M
KRC235M
Transition Frequency
On Resistance
Note : * Characteristic of Transistor Only.
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
VCE(sat)
hFE
R1
fT*
Ron
TEST CONDITION
IC=1mA
IC=50A
IE=50A
VCB=30V
IC=50mA, IB=2.5mA
VCE=5V, IC=50mA
VCE=10V, IE=-50mA, f=100MHz
f=1kHz, IB=1mA, VIN=0.3V
MIN.
15
30
5.0
-
-
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
40
350
2.2
5.6
10
4.7
6.8
200
0.6
MAX. UNIT
-V
-V
-V
0.5 A
80 mV
800 -
-
-
- k
-
-
- MHz
-
2000. 8. 23
Revision No : 1
2/4


Part Number KRC234M
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
PDF Download

KRC234M Datasheet PDF






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