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KEC

KTA501U Datasheet Preview

KTA501U Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
VCBO
VCEO
VEBO
IC
IB
PC *
Tj
Tstg
RATING
-50
-50
-5
-150
-30
200
150
-55 150
UNIT
V
V
V
mA
mA
W
KTA501U
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1 5 DIM MILLIMETERS
A 2.00+_ 0.20
2 A1 1.3+_ 0.1
B 2.1+_ 0.1
3 4 D B1 1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9 +_0.1
T T 0.15+0.1/-0.05
G
1. Q1 BASE
2. Q1, Q 2 EMITTER
3. Q 2 BASE
4. Q 2 COLLECTOR
5. Q 1 COLLECTOR
USV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
12 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-EmitterSaturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE (Note)
VCE(sat)
fT
Cob
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2
IC=-100 , IB=-10
VCE=-10V, IC=-1
VCB=-10V, IE=0, f=1
- - -0.1
- - -0.1
120 - 400
- -0.1 -0.30
80 -
-
- 47
V
Noise Figure
NF VCE=-6V, IC=-0.1 , f=1 , Rg=10
Note : hFE Classification Y(4):120 240, GR(6):200 400
Marking
5
- 1.0 10
Type Name
4
S hFE Rank
2003. 2. 25
Revision No : 4
123
1/3




KEC

KTA501U Datasheet Preview

KTA501U Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTA501U
I C - VCE
-240
-200
-160
-120
-80
IB =-2.0mA
COMMON EMITTER
Ta=25 C
I B =-1.5mA
I B =-1.0mA
IB =-0.5mA
-40 IB =-0.2mA
I B =0mA
0
0 -1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V CE (V)
h FE - IC
3k
COMMON EMITTER
1k
500
300
100
50
30
-0.1
Ta=100 C
Ta=25 C
Ta=-25 C
VCE =-6V
VCE =-1V
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
-1
COMMON EMITTER
-0.5 I C/IB =10
-0.3
-0.1
-0.05
-0.03
Ta=100 C
Ta=25 C
Ta=-25 C
-0.01
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA)
VBE(sat) - I C
-10
COMMON EMITTER
-5 I C/I B=10
Ta=25 C
-3
-1
-0.5
-0.3
-0.1
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA)
fT - IC
3k
COMMON EMITTER
VCE =-10V
1k Ta=25 C
500
300
100
50
30
10
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT I C (mA)
300
2003. 2. 25
Revision No : 4
IB - VBE
-1k
-300
COMMON EMITTER
VCE =-6V
-100
-30
-10
-3
-1
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE VBE (V)
-1.2
2/3


Part Number KTA501U
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 3 Pages
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