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KEC

KTC3192 Datasheet Preview

KTC3192 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
35
30
4
50
-50
625
150
-55150
UNIT
V
V
V
mA
mA
mW
KTC3192
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=35V, IE=0
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE (Note) VCE=12V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=10mA, IB=1mA
Transition Frequency
fT VCE=10V, IC=1mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Collector-Base Time Constant
CcrbbVCE=10V, IE=-1mA, f=30MHz
Power Gain
Gpe 0
VCC=6V, IE=-1mA, f=10.7MHz (Fig.)
Note : hFE Classification R:4080 , O:70140 , Y:120240
MIN.
-
-
40
-
-
100
1.4
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
400
3.2
50
33
UNIT
A
A
V
V
MHz
pF
pS
dB
1996. 9. 6
Revision No : 1
1/4




KEC

KTC3192 Datasheet Preview

KTC3192 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

Fig. Gpe TEST CIRCUIT
INPUT 0.05uF
Rg=50
12pF
KTC3192
1T
2
4
OUTPUT
RL=50
T : 1 - 2 0.1mmΦ UEW 20T
2 - 3 0.1mmΦ UEW 8T
4 - 5 0.1mmΦ UEW 2T
35
IE VCC
y PARAMETERS (Typ.)
(1) (COMMON EMITTER f=455kHz, Ta=25)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC3192-R
6
-1
0.58
53
1.9
2.6
38
-0.79
5.7
-90
KTC3192-O
6
-1
0.41
46
2.7
2.8
38
-0.83
5.7
-90
KTC3192-Y
6
-1
0.26
38
4.8
3.6
38
-0.92
6.2
-90
(2) (COMMON EMITTER f=10.7kHz, Ta=25)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC3192-R
6
-1
1.04
49
10
2.7
37
-9.6
120
-90
KTC3192-O
6
-1
0.85
43
15
2.9
37
-10.4
120
-90
KTC3192-Y
6
-1
0.65
36
28
3.6
37
-11.5
140
-90
UNIT
V
mA
mS
pF
S
pF
mS
S
UNIT
V
mA
mS
pF
S
pF
mS
S
1996. 9. 6
Revision No : 1
2/4


Part Number KTC3192
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
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KTC3192 Datasheet PDF





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