Datasheet4U Logo Datasheet4U.com

KTC3551T - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • ᴌAdoption of MBIT Processes. ᴌLarge Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dis sipation. ᴌComplementary to KTA1551T.

📥 Download Datasheet

Datasheet Details

Part number KTC3551T
Manufacturer KEC
File Size 83.23 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3551T Datasheet

📁 Similar Datasheet

  • KTC3551T - NPN Transistors (Kexin)
  • KTC3503 - NPN Transistor (INCHANGE)
  • KTC3190 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • KTC3192 - NPN Transistor (JCET)
  • KTC3192 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • KTC3194 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • KTC3197 - NPN Transistor (SeCoS)
  • KTC3198 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • KTC3198 - Transistors (Jiangsu Changjiang)
  • KTC3198 - NPN Plastic Encapsulated Transistor (SeCoS)
Other Datasheets by KEC
  • KTC3552T - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3553T - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3502 - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3503 - TRIPLE DIFFUSED NPN TRANSISTOR
  • KTC3531T - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3532T - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3535T - EPITAXIAL PLANAR NPN TRANSISTOR
  • KTC3536T - EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA KTC3551T EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. FEATURES ᴌAdoption of MBIT Processes. ᴌLarge Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dis sipation. ᴌComplementary to KTA1551T. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IB PC * Tj 80 80 50 5 1.0 3 200 0.9 150 Storage Temperature Range Tstg -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.
Published: |