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SMD Type
Transistors
NPN Transistors KTC3551T
■ Features
● Adoption of MBIT Processes. ● Large Current Capacitance. ● Low Collector-to-Emitter Saturation Voltage. ● High-Speed Switching. ● High Allowable Power Dis sipation. ● Complementary to KTA1551T.
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICP PC TJ Tstg
Rating 80 80 50 5 1 3 0.