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SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.
FEATURES ᴌAdoption of MBIT Processes. ᴌLarge Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dis sipation. ᴌComplementary to KTA1551T.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCES VCEO VEBO
IC ICP IB PC * Tj
80 80 50 5 1.0 3 200 0.9 150
Storage Temperature Range
Tstg -55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.