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KTC3600S Datasheet Preview

KTC3600S Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3600S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S21e|2=13dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
20
10
1.5
40
150
150
-55 150
UNIT
V
V
V
mA
mW
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
hFE Rank
RType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=10V, IE=0
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
DC Current Gain
hFE (Note1) VCE=8V, IC=20mA
Collector Output Capacitance
Reverse Transfer Capacitance
Cob
VCB=10V, IE=0, f=1MHz (Note2)
Cre
Transition Frequency
fT VCE=8V, IC=20mA
Insertion Gain
|S21e|2 (1)
|S21e|2 (2)
VCE=8V, IC=20mA, f=1GHz
VCE=8V, IC=20mA, f=2GHz
Noise Figure
NF (1)
NF (2)
VCE=8V, IC=5mA, f=1GHz
VCE=8V, IC=5mA, f=2GHz
Note 1 : hFE Classification H:50~100, J:80~160, K:125~250
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
7
10
-
-
-
TYP.
-
-
-
0.7
0.5
10
13
7
1.1
1.7
MAX.
1
1
250
-
0.95
-
-
-
2.5
-
UNIT
A
A
pF
pF
GHz
dB
dB
dB
dB
2007. 8. 22
Revision No : 0
1/5




KEC

KTC3600S Datasheet Preview

KTC3600S Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

KTC3600S
TYPICAL CHARACTERISTICS (Ta=25 C)
h FE - I C
300
200
100
70
50
30
10
1
VCE=8V
Ta=25 C
2
3
5 7 10
20 30 50
COLLECTOR CURRENT IC (mA)
12
VCE=8V
Ta=25 C
10
fT - IC
8
6
4
2
0
1
3 5 7 10
30
COLLECTOR CURRENT IC (mA)
2
S 2le - f
30
25
20
15
10
5 VCE=8V
IC=20mA
0 Ta=25 C
0.1 0.2 0.3
0.5 0.7 1
FREQUENCY f (GHz)
23
2007. 8. 22
Revision No : 0
C ob , C re - VCB
5
f=1MHz
3 Ta=25 C
1 Cob
0.5 Cre
0.3
0.1
0.1
0.3 0.5 1
35
COLLECTOR-BASE VOLTAGE VCB (V)
10
12
10
8
6
4
2
0
1
2
S 2le - I C
3 5 7 10
VCE=8V
f=2GHz
Ta=25 C
30
COLLECTOR CURRENT IC (mA)
NF - I C
5
VCE=8V
Ta=25 C
4
3
f=2GHz
2
f=1GHz
1
0
1
2 3 5 7 10
20 30 50
COLLECTOR CURRENT IC (mA)
2/5


Part Number KTC3600S
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
Total Page 5 Pages
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