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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA2015.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 35 30 5 500 50 100 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
A J G
KTC4076
EPITAXIAL PLANAR NPN TRANSISTOR
C L
E
MB
M
2 1
NK
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0.15
C 0.90 +_ 0.10 3 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70 H M 0.42+_ 0.10
N 0.10 MIN N
1. EMITTER 2. BASE 3.
KTC4076 Datasheet
