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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to KTC8550S.
L
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING 35 30 5 800 -800 350 150 -55 150 0.6 ) UNIT V
1
P
P
N
C
V V mA mA mW
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
M
1. EMITTER 2. BASE 3. COLLECTOR
K
* PC : Package Mounted On 99.
KTC8050S Datasheet
