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SEMICONDUCTOR
TECHNICAL DATA
KTD2059
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES ᴌComplementary to KTB1367.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 100 100 5 5 0.5 30 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
O Q
A U
E
K
LL
M DD
NN T
T
123
J
GF B P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX
E Ѹ3.20Ź0.20 F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM N
1.30 2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR S
10Ɓ 25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE 2. COLLECTOR 3.
KTD2059 Datasheet
