Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
- Collector Power Dissipation-
: PC= 30W@ TC= 25℃
- Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A)
- plement to Type KTB1367
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose...
