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KTD2059 - Silicon NPN Power Transistors

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector Power Dissipation- : PC= 30W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) Complement to Type KTB1367 Minimum Lot-to-Lot variations for robust device performance and r

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) ·Complement to Type KTB1367 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.