The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
KTD2059
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES ᴌComplementary to KTB1367.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 100 100 5 5 0.5 30 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
O Q
A U
E
K
LL
M DD
NN T
T
123
J
GF B P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX
E Ѹ3.20Ź0.20 F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM N
1.30 2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR S
10Ɓ 25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE 2. COLLECTOR 3.
KTD2059 Datasheet
