SEMICONDUCTOR
TECHNICAL DATA
TIP41CF
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP42CF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
DC
Pulse
IC
ICP
Base Current
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
100
100
5
6
10
2
2
25
150
-55 150
UNIT
V
V
V
A
A
W
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
VCEO(SUS)
ICEO
ICES
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
VCE(sat)
VBE(on)
fT
TEST CONDITION
IC=30mA, IB=0
VCE=60V, IB=0
VCE=100V, VEB=0
VEB=5V, IC=0
VCE=4V, IC=0.3A
VCE=4V, IC=3A
IC=6A, IB=600mA
VCE=4V, IC=6A
VCE=10V, IC=500mA
MIN.
100
-
-
-
30
15
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
0.7
400
1
-
75
1.5
2.0
-
UNIT
V
mA
A
mA
V
V
MHz
2007. 5. 21
Revision No : 0
1/2
