| Description | These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as a... |
| Features |
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating
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3. Pin configuration
Pin 1 2 3 4
Function Gate Drain Source Drain
1 of 7
Datasheet pdf - http://www.DataSheet4U....
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| Datasheet |
 65N06 Datasheet - 486.02KB |
