Datasheet Details
| Part number | 65N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.76 KB |
| Description | N-Channel MOSFET |
| Datasheet | 65N06-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 65N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.76 KB |
| Description | N-Channel MOSFET |
| Datasheet | 65N06-INCHANGE.pdf |
|
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·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 60 V ±20 V 63 A 240 A 150 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 1.05 62.5 UNIT ℃/W ℃/W 65N06 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
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65N06 | 60V N-CHANNEL MOSFET | KIA |
| Part Number | Description |
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