65N06 Description
·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ TJ Max. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor TC=25℃ unless otherwise specified...
65N06 Key Features
- Drain Current -ID=63A@ TC=25℃ -Drain Source Voltage