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65N06 - 60V N-CHANNEL MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology.

Features

  • 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating www. DataSheet. net/ 3. Pin configuration Pin 1 2 3 4 Function Gate Drain Source Drain 1 of 7 Datasheet pdf - http://www. DataSheet4U. co. kr/ KIA.

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Datasheet Details

Part number 65N06
Manufacturer KIA
File Size 486.02 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet 65N06 Datasheet
Additional preview pages of the 65N06 datasheet.

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    Full PDF Text Transcription

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    KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. 2. Features „ „ „ „ „ „ „ 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.
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