The 65N06 is a N-Channel MOSFET.
| Height | 1.1 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 65N06 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
V.
*Drain Current *ID=63A@ TC=25℃ *Drain Source Voltage- : VDSS= 60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for low voltage, high speed switching applications in power sup. |
| Part Number | 65N06 Datasheet |
|---|---|
| Description | 60V N-CHANNEL MOSFET |
| Manufacturer | KIA |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize .
* * * * * * * 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating 3. Pin configuration Pin 1 2 3 4 Function Gate Drain Source Drai. |
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