Datasheet Summary
NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N- Channel TO- 220, D2PAK
Features
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V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A
Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb- Free Packages are Available-
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage
- Continuous Thermal Resistance
- Junction- to- Case Total Power Dissipation @ TC = 25°C Drain Current
- Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms) Thermal Resistance
- Junction- to- Ambient (Note 1)...