SJMN04A65D Key Features
- Drain-Source voltage: VDS=700V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.83Ω (Typ.)
- Ultra low gate charge: Qg=10nC (Typ.)
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code -. WW : Week Code
- Part: SJMN04A65D
- Manufacturer: Kodenshi AUK Group
- Size: 425.68 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN05A70D | N-Channel Super Junction MOSFET |
| SJMN05A70I | N-Channel Super Junction MOSFET |
| SJMN05S60FD | N-Channel Super Junction MOSFET |
| SJMN065R65W | N-Channel Super Junction MOSFET |
| SJMN078R60W | N-Channel Super Junction MOSFET |
SJMN04A65D Description
SJMN04A65D Super Junction MOSFET N-Channel Super Junction MOSFET.