• Part: SMK0465D
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 285.98 KB
Download SMK0465D Datasheet PDF
Kodenshi AUK Group
SMK0465D
SMK0465D is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - - - - High Voltage : BVDSS=650V(Min.) Low Crss : Crss=5.6p F(Typ.) Low gate charge : Qg=11.2n C(Typ.) Low RDS(on) : RDS(on)=3.0Ω(Max.) G Package Code TO-252 S TO-252 S Type No. SMK0465D Marking SMK0465 PIN Connection Ordering Information Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 650 30 4.0 2.53 16 48 4 81.5 4 3.4 150 -55~150 Unit V V A A A W A m J A m J C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 2.6 62.5 Unit ℃/W KSD-T6O021-000 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=650V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=2.0A VDS=10V, ID=2.0A VGS=0V, VDS=25V, f=1MHz Min. 650 2.0 -...