SMK0990FD Key Features
- Drain-Source breakdown voltage: BVDSS=900V
- Low gate charge: Qg=52nC (Typ.)
- Low drain-source On resistance: RDS(on)=1.4Ω (Max.)
- RoHS pliant device
- 100% avalanche tested
- Part: SMK0990FD
- Description: Advanced N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 331.78 KB
Other SMK0990FD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
SMK0990CI | N-Channel MOSFET |