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SMK0990CI - N-Channel MOSFET

Key Features

  • New revolutionary high voltage technology.
  • With TO-3PN package.
  • Drain-Source breakdown voltage:BVDSS=900V(Min. ).
  • Low drain-source On resistance: RDS(on)=1.4Ω (Max. ).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI ·FEATURES ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain-source On resistance: RDS(on)=1.4Ω (Max.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 9 5.