SMK0990CI Datasheet and Specifications PDF

SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=900V (Min.)  Low gate charge: Qg=52nC (Typ.)  Low drain-source On resistance: R.

* Drain-Source breakdown voltage: BVDSS=900V (Min.)
* Low gate charge: Qg=52nC (Typ.)
* Low drain-source On resistance: RDS(on)=1.4Ω (Max.)
* 100% avalanche tested
* RoHS compliant device Ordering Information Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS TO-3P Marking Information Column.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI ·FEATURES ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain.

*New revolutionary high voltage technology
*With TO-3PN package
*Drain-Source breakdown voltage:BVDSS=900V(Min.)
*Low drain-source On resistance: RDS(on)=1.4Ω (Max.)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching a.