SMK0990CI
SMK0990CI is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-Source breakdown voltage: BVDSS=900V (Min.)
- Low gate charge: Qg=52n C (Typ.)
- Low drain-source On resistance: RDS(on)=1.4Ω (Max.)
- 100% avalanche tested
- Ro HS pliant device
Ordering Information
Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS
TO-3P
Marking Information
Column 1: Manufacturer Column 2: Production Information e.g.) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code
AUK GFYMDD SMK0990
Absolute maximum ratings
Characteristic Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- (TC=25C unless otherwise noted)
Symbol VDSS VGSS ID Tc=25C Tc=100C IDM
(Note 2)
Rating 900 30 9 5.7 36 900 9 13 130 150 -55~150
Unit V V A A A m J A m J W C C
Single pulsed avalanche energy Repetitive avalanche current Repetitive avalanche energy Power dissipation Junction temperature Storage temperature range
EAS IAR EAR PD TJ Tstg
(Note 1) (Note 1)
- Limited only maximum junction temperature
Rev. date: 24-APR-12
KSD-T0V010-000
.auk.co.kr
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Thermal Characteristics
Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 0.96 Max. 40 Unit C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time
(Note 4,5) (Note 4,5) (Note 4,5) (Note 4)
Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf
Test Condition ID=250u A, VGS=0 ID=250u A, VDS=VGS VDS=900V, VGS=0V VDS=720V, Tc=125C VDS=0V, VGS=30V VGS=10V, ID=4.5A VDS=10V, ID=4.5A VDS=25V, VGS=0V, f=1.0MHz
Min. 900 3
- Typ. 1.12 9.2 2100 175 14 50 120 100 75 52 16 20
Max. 5 1 100 100 1.4...