Datasheet4U Logo Datasheet4U.com

1SS344 - ULTRA HIGH SPEED SWITCHING DIODE

Key Features

  • Low forward voltage: VF(3) = 0.50V(Typ). Fast reverse recovery time: trr = 20ns(Typ). High average forward current: IO = 0.5A(Max). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maxim um Ratings Ta = 25 P aram eter Maximum(Peak) Reverse Voltage Reverse Voltage Maximum(Peak) Forward Current Average Rectified Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Tempera.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS344 Silicon Epitaxial Schottky Planar Type Diode Toshiba Semiconductor
1SS344 SCHOTTKY B ARRIER DIODE Jin Yu Semiconductor
1SS344 SCHOTTKY BARRIER DIODE JCET
1SS344 Surface Mount Schottky Planar Diode LGE
1SS344 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP

Other Datasheets by Kexin Semiconductor

Part Number Description
1SS345 Sillicon Epitaxial Schottky Barrier Diode
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES
1SS313 VHF TUNER BAND SWITCH APPLICATIONS DIODES
1SS322 LOW VOLTAGE HIGH SPEED SWITCHING DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS344 Features Low forward voltage: VF(3) = 0.50V(Typ). Fast reverse recovery time: trr = 20ns(Typ). High average forward current: IO = 0.5A(Max). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.