1SS344 - Silicon Epitaxial Schottky Planar Type Diode

Toshiba

Datasheet Details

Part number	1SS344
Manufacturer	Toshiba
File Size	191.08 KB
Description	Silicon Epitaxial Schottky Planar Type Diode
Datasheet	1SS344 Datasheet

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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application 1SS344 Unit: mm z Low forward voltage : VF (3) = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 1500 mA Average forward current IO 500 mA Surge current (10ms) IFSM 5 A Power dissipation P 200 mW Junction temperature Tj 125 °C Storage temperature Operating Temperature Tstg −55~125 °C JEDEC Topr −40~100 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy loads (e.g.