2SA1413-Z
2SA1413-Z is PNP Transistors manufactured by Kexin Semiconductor.
Features
High Voltage: VCEO=-600V High speed:tr 1.0ìs
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)
- 1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature
- 1 pw 10ms,Duty Cycle 50%
- 2 When mounted on ceramic substrate of 7.5cm2X0.7mm )
- 2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -600 -600 -7 -1 -2 2 150 -55 to 150 Unit V V V A A W
3 .8 0
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Free Datasheet http://../
SMD Type
Electrical Characteristics Ta = 25
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain- Collector Saturation Voltage
- Base Saturation Voltage
- Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall time
- PW 350ìs,Duty Cycle 2% Symbol ICBO IEBO h FE VCE(sat) VBE(sat) f T Cob ton tstg tf Testconditons VCB=-600V,IE=0 VEB=-7V,IC=0 VCE=-5V,IC=-0.1A VCE=-5V,IC=-0.5A IC=-0.3A,IB=-60m A IC=-0.3A,IB=-60m A VCE=-10V,IE=-50m A VCB=-10V,IE=0,f=1.0MHz IC=-0.5A,RL=500Ù IB1=-IB2=-0.1A,VCC=-250V
Transistors
Min
Typ
Max -10 -10
Unit ìA ìA
30 5
58 19 -0.28 -0.85 28 42 0.1 3.5 0.08
-1...
