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2SA1413-Z - PNP Transistor

General Description

With TO-252(DPAK) packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or mo

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isc Silicon PNP Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -600 V VCEO Collector-Emitter Voltage -600 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1413-Z isc website：www.iscsemi.