Datasheet Details
| Part number | 2SA1413-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.05 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1413-Z-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1413-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.05 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1413-Z-INCHANGE.pdf |
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·With TO-252(DPAK) packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -600 V VCEO Collector-Emitter Voltage -600 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1413-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A;
IB= -0.06A VBE(sat) Base-Emitter Saturation Voltage IC= -0.3A;
IB= -0.06A VCBO Collector-Base Breakdown Voltage IC= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1413-Z | PNP Transistor | NEC |
 |
2SA1413-Z | PNP Transistors | Kexin |
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2SA1413-Z | PNP SILICON TRIPLE DIFFUSED TRANSISTOR | Renesas |
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2SA1413 | PNP Silicon Transistors | NEC Electronics |
| Part Number | Description |
|---|---|
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| 2SA1400Z | PNP Transistor |
| 2SA1441 | Silicon PNP Power Transistor |
| 2SA1486 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |