Renesas Electronics 2SA1412-Z
The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.| Part No. | 2SA1412-Z |
|---|---|
| Datasheet | 2SA1412-Z Download |
| Manufacturer |  Renesas Electronics |
| Description | PNP SILICON TRIPLE DIFFUSED TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● High Voltage: VCEO = −400 V● High Speed: tf ≤ 0.7 μs
● Complement to 2SC3631-Z
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Collector to base voltage VCBO −400 V Collector to emitter voltage VCEO −400 V Base to emitter voltage VEBO −7 V Collector current (DC) IC(DC) −2.0 A Collector current (pulse) Note 1 IC(pulse) −4.0 A Total power dissipation (TA = 25°C) Note 2 PT 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C <R> PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 2.3 ±0.3 0.5 ±0.1 2.3 ±0.3 0.5 ±0.1 0.15 ±0.15 TO-252 (MP-3Z) 1. Base 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
