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2SA1412-Z - Transistor

Key Features

  • High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse).
  • 1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature.
  • 1 pw 10ms.

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SMD Type PNP Silicon Transistor 2SA1412-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) *1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature *1 pw 10ms,Duty Cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm ) *2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -400 -400 -7 -2 -4 2 150 -55 to 150 Unit V V V A A W 3 .