Kexin Electronics 2SA1412-Z
PNP Silicon Transistor
FEATURES
High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 EmitterABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) *1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature *1 pw 10ms,Duty Cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm ) *2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -400 -400 -7 -2 -4 2 150 -55 to 150 Unit V V V A A W 3 .8 0 High speed:tr 0.7ìs 1 Free Datasheet SMD Type 2SA1412-ZELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Collector Saturation Voltage * Base Saturation Voltage * Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall time * PW 350ìs,Duty Cycle 2% Symbo...