Kexin Electronics 2SA1415
Transistor
| Part No. | 2SA1415 |
|---|---|
| Datasheet | 2SA1415 Download |
| Manufacturer | Kexin Electronics |
| Description | Transistor |
| Buy | Stock & Price |
APPLICATIONS
2SA1415 TransistorsFEATURES
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching SpeedABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -180 -160 -5 -140 -200 500 1.3 150 -55 to +150 Unit V V V mA mA mW WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE Testconditons VCB = -80V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -10mA 100 -0.14 150 4 0.1 See Test Circuit. 1.5 0.1 ìs Min Typ Max -100 -100 400 -0.4 V MHz pF Unit nA nA V...
