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2SA1415 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process.
  • High breakdown voltage (VCEO=160V).
  • Excellent linearity of hFE and small Cob.
  • Fast switching speed.
  • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

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Datasheet Details

Part number 2SA1415
Manufacturer onsemi
File Size 93.20 KB
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SA1415 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1415 / 2SC3645 Ordering number : EN1720B 2SA1415 / 2SC3645 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Moutned on ceramic board (250mm2✕0.