| Part Number | 2SA1415 |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage (VC.
* Adoption of FBET process. * High breakdown voltage (VCEO=160V). * Excellent linearity of hFE and small Cob. * Fast switching speed. * Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max . |
2SA1415 Datasheet
The 2SA1415 is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SA1415 |
|---|---|
| Description | PNP / NPN Epitaxial Planar Silicon Transistors |
| Manufacturer | onsemi |
| Overview |
2SA1415 / 2SC3645
Ordering number : EN1720B
2SA1415 / 2SC3645
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching, Predriver Applications
Features
• Adoption of FBET process. • H.
* Adoption of FBET process. * High breakdown voltage (VCEO=160V). * Excellent linearity of hFE and small Cob. * Fast switching speed. * Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collect. |
| Part Number | 2SA1415 |
|---|---|
| Description | Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type High-Voltage Switching Applications 2SA1415 Transistors Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed. Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power D. |