Datasheet4U Logo Datasheet4U.com

2SA1417 - Transistor

Key Features

  • Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
  • Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating -120 -100 -6 -2 -3 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1417 PNP / NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
2SA1417 Transistor TY Semiconductor
2SA1417 Bipolar Transistor ON Semiconductor
2SA1411 Transistor ETC
2SA1411 Transistor TY Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SA1411 Transistor
2SA1412-Z Transistor
2SA1413-Z Transistor
2SA1415 Transistor
2SA1416 Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type High-Voltage Switching Applications 2SA1417 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -120 -100 -6 -2 -3 500 1.