Kexin Electronics 2SA1417
NPN Transistor
APPLICATIONS
2SA1417 TransistorsFEATURES
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current CapacityABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -120 -100 -6 -2 -3 500 1.5 150 -55 to +150 Unit V V V A A mW WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -100V , IE = 0 VEB = -4V , IC = 0 -120 -100 -6 100 -0.22 -0.85 120 25 80 See Test Circuit.