| Part Number | 2SA1417 |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
• Adoption of .
* Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching speed * Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltag. |
2SA1417 Datasheet
The 2SA1417 is a PNP / NPN Epitaxial Planar Silicon Transistor.
| Part Number | 2SA1417 |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | onsemi |
| Overview |
DATA SHEET
Bipolar Transistor
(-)100 V, (-)2 A, Low VCE(sat), (PNP) NPN Single PCP
2SA1417, 2SC3647
12 3
SOT−89−3 CASE 419AU
ELECTRICAL CONNECTION
Features
• Adoption of FBET, MBIT P.
* Adoption of FBET, MBIT Processes * High Breakdown Voltage and Large Current Capacity * Ultrasmall Size Making it Easy to Provide High *density Small *sized Hybrid ICs * These Devices are Pb *Free and Halide Free SPECIFICATIONS ( ): 2SA1417 2 1 3 2SA1417 2 1 : Base 1 2 : Collector 3 : Emitter 3. |
| Part Number | 2SA1417 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type High-Voltage Switching Applications 2SA1417 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Paramet. Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage te. |