Datasheet Details
| Part number | 2SA1412-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.89 KB |
| Description | NPN Transistor |
| Datasheet | 2SA1412-Z-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SA1412-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.89 KB |
| Description | NPN Transistor |
| Datasheet | 2SA1412-Z-INCHANGE.pdf |
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·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1412-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=-1mA;
IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=-10mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1412-Z | PNP Transistor | NEC |
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2SA1412-Z | PNP Silicon Transistor | Kexin |
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2SA1412-Z | PNP SILICON TRIPLE DIFFUSED TRANSISTOR | Renesas |
| Part Number | Description |
|---|---|
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| 2SA1400Z | PNP Transistor |
| 2SA1441 | Silicon PNP Power Transistor |
| 2SA1486 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |