With TO-252(DPAK) packaging
Excellent linearity of hFE
Low collector-to-emitter saturation voltage
Fast switching speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Relay drivers
High-speed inverters
Converte
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isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-500
V
VCEO Collector-Emitter Voltage
-400
V
VEBO Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-2
A
2
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1412-Z
isc website：www.iscsemi.
2SA1412-Z Datasheet
