2SA1412-Z Datasheet

The 2SA1412-Z is a PNP Transistor.

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Part Number2SA1412-Z
ManufacturerNEC
Overview . .
Part Number2SA1412-Z
DescriptionPNP Silicon Transistor
ManufacturerKexin Semiconductor
Overview SMD Type PNP Silicon Transistor 2SA1412-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15. High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Vol.
Part Number2SA1412-Z
DescriptionPNP SILICON TRIPLE DIFFUSED TRANSISTOR
ManufacturerRenesas
Overview The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −400 V • High Speed: tf ≤ 0.7 μs • Complement to 2SC3631-Z ABSOLUTE MA.
* High Voltage: VCEO =
*400 V
* High Speed: tf ≤ 0.7 μs
* Complement to 2SC3631-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO
*400 V Collector to emitter voltage VCEO
*400 V Base to emitter voltage VEBO
*7 V Collector current (DC) IC(DC)
*2.0 A Collector cur.
Part Number2SA1412-Z
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op. tage IC=-10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -1.0A; IB=- 0.2A ICBO Collector Cutoff Current VCB= -500V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE-1 DC Current Cain IC= -100mA ; VCE= -5V hFE.