Low VCE(sat). VCE(sat) = -0.2V (Typ. ) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature.
Single pulse Pw=10ms. Symbol VCBO VCEO VEBO IC ICP.
PC Tj Tstg Rating -20 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Paramete.
