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2SB1424 - Transistor

Key Features

  • Low VCE(SAT)=-0.2V(Typ. ) (IC/IB=-2A/-0.1mA). Pb Lead-free.
  • Excellent DC current gain characterisitics.
  • Complementary the 2SD2150. 2SB1424.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Low VCE(sat) Transistor(-20V,-3A) FEATURES  Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD2150. 2SB1424 APPLICATIONS  This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB1424 AEQ/AER SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -20 VCEO Collector-Emitter Voltage -20 Unit V V VEBO IC PC Tj,Tstg Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation Junction and Storage Temperature -6 -3 -5 0.5 -55 to +150 V A W ℃ E035 Rev.A www.gmesemi.