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2SB1424 - Transistor

Key Features

  • Low VCE(sat). VCE(sat) = -0.2V (Typ. ) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature.
  • Single pulse Pw=10ms. Symbol VCBO VCEO VEBO IC ICP.
  • PC Tj Tstg Rating -20 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Paramete.

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SMD Type Low VCE(sat) Transistor 2SB1424 Transistors Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature * Single pulse Pw=10ms. Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -20 -20 -6 -3 -5 0.