* 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rat
2SC3360
Kexin
54.86 KB
Npn silicon epitaxial transistor.
SMD Type NPN Silicon Epitaxial Transistor 2SC3360 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm High DC current gain.hFE=90 to 450 +0.1 2.4.
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