Renesas Electronics 2SC3360
NPN SILICON TRANSISTOR
DATA SHEET SILICON TRANSISTOR 2SC3360 HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17874EJ2V0DS00 (2nd edition) (Previous No. TC-1643) c Date Published January 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1985 TYPICAL CHARACTERISTICS (Ta = 25°C) 2SC3360 2 Data Sheet D17874EJ2V0DS 2SC3360 <R> Data Sheet D17874EJ2V0DS 3 2SC3360
● The information in this document is current as of January, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products.
● The information in this document is current as of January, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products.