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2SC3360 Datasheet PDF

Kexin Electronics 2SC3360

NPN Silicon Epitaxial Transistor

Part No. 2SC3360
Datasheet 2SC3360 Download
Manufacturer Kexin Electronics
Description NPN Silicon Epitaxial Transistor
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2SC3360 datasheet page 1 preview

FEATURES

3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 200 200 5 100 200 150 -55 to +150 Unit V V V mA mW

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE VBE Testconditons VCB = 200V, IE=0 VEB = 5V, IC=0 VCE =10V , IC = 10mA VCE =10V , IC = 50mA VCE =10V , IC = 10mA 90 50 0.6 200 200 0.64 0.1 0.8 160 2.8 0.15 1.3 0.3 0.7 0.3 1.2 V V V MHz pF ìs ìs ìs Min Typ Max 100 100 450 Unit nA nA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA fT Cob ton tstg...