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2SC3360 - NPN Silicon Epitaxial Transistor

Key Features

  • 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 200 200 5 100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain.
  • Base-emitter voltage.
  • Co.

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Full PDF Text Transcription (Reference)

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SMD Type NPN Silicon Epitaxial Transistor 2SC3360 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm High DC current gain.hFE=90 to 450 +0.1 2.4-0.1 High voltage VCEO=200V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.