2SC3365 Overview
Key Features
- Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 10 A, IB1 = 2 A, IB2 =
- 0.6 A, VBE =
| Part | 2SC3365 |
|---|---|
| Description | Silicon NPN Transistor |
| Category | Transistor |
| Manufacturer | Hitachi Semiconductor |
| Size | 41.67 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3365 | SavantIC | SILICON POWER TRANSISTOR |
| 2SC3365 | Renesas | Silicon NPN Transistor |
| 2SC3365 | Inchange Semiconductor | NPN Transistor |
| C3360 | Renesas | 2SC3360 |
| 2SC3361 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |