Renesas Electronics 2SC3365
Silicon NPN Transistor
| Part No. | 2SC3365 |
|---|---|
| Datasheet | 2SC3365 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg Ratings Unit 500 V 400 V 10 V 10 A 20 A 5 A 80 W 150 °C –55 to +150 °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) VCEX(sus) 400 400 Typ — — Emitter to base breakdown V(BR)EBO 10 — voltage Collector cutoff current I CBO — — I CEO — — DC current transfer ratio hFE1 12 — hFE2 5 — Collector to emitter saturation VCE(sat) — — voltage Base to emitter saturation VBE(sat) — — voltage Turn on time Storage time Fall time Note: 1. Pulse test t on — — t stg — — tf — — Max Unit — V — V — V 50 µA 50 µA — — 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 10 A, IB1 = 2 A, IB2 = –0.6 A, V...
