Hitachi 2SC3365
Silicon NPN Transistor
| Part No. | 2SC3365 |
|---|---|
| Datasheet | 2SC3365 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 10 10 20 5 80 150 –55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 10 A, IB1 = 2 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5.0 V, IC = 5 A*1 VCE = 5.0 V, IC = 10 A*1 V V µs µs µs I C = 10 A, IB1 = –IB2 = 2 A, VCC ≅ 150 V I C = 5 A, IB = 1 A*1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 10 — — 12 5 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 1.0 2.5 1.
