2SC3365 Description
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3365 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.