Datasheet4U Logo Datasheet4U.com

2SC3365 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

switching applications.

📥 Download Datasheet

Datasheet preview – 2SC3365

Datasheet Details

Part number 2SC3365
Manufacturer INCHANGE
File Size 213.83 KB
Description NPN Transistor
Datasheet download datasheet 2SC3365 Datasheet
Additional preview pages of the 2SC3365 datasheet.

📁 Similar Datasheet

  • 2SC3365 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC3365 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3365 - Silicon NPN Transistor (Renesas)
  • 2SC3360 - NPN Silicon Transistor (NEC)
  • 2SC3360 - NPN Silicon Epitaxial Transistor (Kexin)
  • 2SC3360 - NPN SILICON TRANSISTOR (Renesas)
  • 2SC3361 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3361 - NPN Epitaxial Planar Silicon Transistors (Kexin)
  • 2SC3369 - Si NPN Epitaxial Planar Transistor (National Semiconductor)
  • 2SC3300 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3365 isc website：www.iscsemi.
Published: |