| Part Number | 2SC3365 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SC3365
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
1
2
3
2SC3365
Absolute Maximum Ratings (.
V I C = 5 A, IB = 1 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
10 * * 12 5 * * * * * * * * * * * * * * * * 50 50 * * 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation v. |
2SC3365 Datasheet and Specifications PDF
The 2SC3365 is a Silicon NPN Transistor.
Key Specifications
| Part Number | 2SC3365 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified ou. ration voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=:,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=: IC=5A ; VCE=5V IC=10A ; VCE=5V 12 5 MIN 400 10 2SC3365 SYMBOL . |
| Part Number | 2SC3365 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Renesas |
| Overview |
2SC3365
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
ADE-208-892 (Z) 1st. Edition
September 2000
1 2 3
1. Base 2. Collector
(Flange) 3. E.
on VCE(sat)
* * voltage Base to emitter saturation VBE(sat) * * voltage Turn on time Storage time Fall time Note: 1. Pulse test t on * * t stg * * tf * * Max Unit * V * V * V 50 µA 50 µA * * 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = . |
| Part Number | 2SC3365 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high . oltage IC= 0.2A; RBE= ∞; L= 100mH 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 2A; IB2= -0.6A; VBE= -5V; L= 180μH; Clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sa. |