2SC3365 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=:,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V;...